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| SOT23 NPN SILICON PLANAR RF TRANSISTOR ISSUE 2 NOVEMBER 1995 FEATURES * High fT=650MHz * Maximum capacitance 0.7pF * Low noise < 5dB at 500MHz FMMTH10 E C B PARTMARKING DETAIL 3EZ SOT23 SYMBOL VCES VCEO VEBO IC ICM Ptot Tj:Tstg MAX. UNIT V V V 100 100 0.5 Typ. 0.45 0.65 0.95 60 650 0.7 9 Typ. 3 5 MHz pF ps dB nA nA V pF V VALUE 30 25 3 25 50 330 -55 to +150 CONDITIONS. IC=100A, IE=0 IC=1mA, IB=0 IE=10A, IC=0 VCB=25V, IE=0 VEB=2V,IC=0 IC=4mA, IB=0.4mA VCB=10V, IE=0 f=1MHz IC=4mA, VCE=10V IC=4mA, VCE=10V* IC=4mA, VCE=10V, f=100MHz VCB=10V, IE=0, f=1MHz IC=4mA, VCB=10V, f=31.8MHz IC=2mA, VCE=5V f=500MHz, UNIT V V V mA mA mW C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO MIN. 30 25 3 ELECTRICAL CHARACTERISTICS (at Tamb = 25C) Collector-Emitter Saturation VCE(sat) Voltage Common Base Feedback Capacitance Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Crb VBE(on) hFE fT Collector Base Capacitance Ccb Collector Base Time Constant rbCc Noise Figure Nf *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 181 FMMTH10 TYPICAL CHARACTERISTICS 200 175C 150 0.8 V+-=-10V 1.0 V+-=-10V -55C - (Volts) -Gain 100C 100 25C 0.6 0.4 25C 100C 175C h 50 -55C 0.2 0 V 0.1 1 10 100 0 0.1 1 10 100 IC - (mA) IC - (mA) hFE v IC VBE(on)v IC 1500 V+-=10V f=100MHz 1.2 1.0 0.8 f - (MHz) 1000 - (pF) C 0.1 1 10 100 500 0 0.6 0.4 0.2 0 IC - (mA) 0.1 1 10 30 VCB- (Volts) fT v IC CCB v VCB 3 - 182 |
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